Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | 8-SOIC(0.173,4.40mm wide) |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 450mW |
FET Type | N and P Channel |
Drain source voltage (Vdss) | 30V |
Current at 25 ° C - continuous drain (Id) | 6A,4.5A |
On resistance (maximum) for different Ids and Vgs | 26 mΩ @ 3A,10V |
Vgs (th) (maximum) for different Ids | 2V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | 27nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 1240pF @ 10V |
FET function | Logic level gate |